DIM1200FSM17-A Datasheet. Specs and Replacement

Type Designator: DIM1200FSM17-A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 10400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 250 nS

Package: MODULE

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DIM1200FSM17-A datasheet

 ..1. Size:421K  dynex
 dim1200fsm17-a.pdf pdf_icon

DIM1200FSM17-A

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th... See More ⇒

 3.1. Size:420K  dynex
 dim1200fsm12-a.pdf pdf_icon

DIM1200FSM17-A

DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the... See More ⇒

 5.1. Size:418K  dynex
 dim1200fss12-a.pdf pdf_icon

DIM1200FSM17-A

DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary... See More ⇒

 7.1. Size:454K  dynex
 dim1200asm45-ts.pdf pdf_icon

DIM1200FSM17-A

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux... See More ⇒

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Specs: DIM1000NSM33-TS, DIM1000XSM33-TL001, DIM1000XSM33-TS001, DIM100PHM33-F, DIM1200ASM45-TS, DIM1200ASM45-TS001, DIM1200ESM33-F, DIM1200FSM12-A, IKW50N60T, DIM1200FSS12-A, DIM1500ASM33-TL001, DIM1500ASM33-TS001, DIM1500ESM33-TL, DIM1500ESM33-TS, DIM1600ECM17-A, DIM1600FSM12-A, DIM1600FSM17-A

Keywords - DIM1200FSM17-A transistor spec

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