All IGBT. IRG4PF50W Datasheet

 

IRG4PF50W IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PF50W

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 900

Maximum Collector Current |Ic|, A: 28

Maximum Junction Temperature (Tj), °C: 175

Package: TO247AC

IRG4PF50W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PF50W Datasheet (PDF)

0.1. irg4pf50w.pdf Size:132K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91710IRG4PF50WINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for use in Welding and Switch-ModeVCES = 900VPower Supply applications Industry benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.25VG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 28AE Latest technology IGB

0.2. irg4pf50wd.pdf Size:253K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91788IRG4PF50WDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Optimized for use in Welding and Switch-ModeVCES = 900VPower Supply applications Industry benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.25VG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, I

 9.1. irg4ph40u.pdf Size:166K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.43VG parameter distribution and higher efficiency than previous gene

9.2. irg4psh71kd.pdf Size:198K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91688AIRG4PSH71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 1200Vwith TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized forVCE(on) typ. = 2.97VmotorcontrolG Minimum switching losses com

 9.3. irg4pc50w.pdf Size:159K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC50WI T D T I T I T CFeaturesFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

9.4. irg4pc30kd.pdf Size:184K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin

 9.5. irg4ph40k.pdf Size:160K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PH40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74VG switching speed Latest generation design provi

9.6. irg4ph40ud2-e.pdf Size:299K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 96781AIRG4PH40UD2-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast IGBT optimized for high operatingVCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafastVCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use inG resonant circuits Indus

9.7. irg4pc40s.pdf Size:148K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

9.8. irg4psh71ud.pdf Size:326K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91686IRG4PSH71UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Copack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHzVCES = 1200V in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.52VG parameter distribution and higher effi

9.9. irg4ph20k.pdf Size:152K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91776IRG4PH20KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.17VG switching speed Latest generation design provides tighter parameter@VGE = 15V, IC = 5

9.10. irg4ph30k.pdf Size:164K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PH30KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.10VG switching speed Latest generation design provi

9.11. irg4pc30f.pdf Size:150K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE

9.12. irg4pc20u.pdf Size:693K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 97289IRG4PC20UPbFUltraFast Speed IGBTPROVISIONALINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.85VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 6.5AE Generatio

9.13. irg4psc71ud.pdf Size:248K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov

9.14. irg4ph20kd.pdf Size:193K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91777IRG4PH20KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 3.17V Combines low conduction losses with highG switching speed@VGE = 15V, IC = 5.0A Tighter para

9.15. irg4pc50fd.pdf Size:214K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

9.16. irg4ph50s.pdf Size:126K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

9.17. irg4psh71k.pdf Size:136K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91687AIRG4PSH71KPRELIMINARYShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 1200V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 42A

9.18. irg4pc40u.pdf Size:153K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation 3

9.19. irg4p254s.pdf Size:129K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4P254SI T D T I T I T Standard Speed IGBTFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 250V voltage and operating frequencies up to 10kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.32VG Generation 3 Industry stand

9.20. irg4pc30fd.pdf Size:216K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high

9.21. irg4ph40s.pdf Size:127K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91808IRG4PH40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low on state voltage drop 1.0V typical atVCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC packageVCE(on) typ. = 1.46VG@VGE = 15V, IC = 20AEN-channelBenefits High current density systems Optimized for specific app

9.22. irg4pc30k.pdf Size:127K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

9.23. irg4pc40kd.pdf Size:188K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91584AIRG4PC40KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design pro

9.24. irg4pc40w.pdf Size:119K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91656CIRG4PC40WINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 20AE Low IGBT conduction losses

9.25. irg4pc30u.pdf Size:151K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3

9.26. irg4pc60u.pdf Size:126K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

9.27. irg4pc30ud.pdf Size:216K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

9.28. irg4psc71kd.pdf Size:191K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb

9.29. irg4ph50s-e.pdf Size:220K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

9.30. irg4psh71u.pdf Size:271K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91685IRG4PSH71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.50VG parameter distribution and higher efficiency (minimum switching and conduct

9.31. irg4pc30s.pdf Size:125K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

9.32. auirg4ph50s.pdf Size:295K _international_rectifier

IRG4PF50W
IRG4PF50W

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

9.33. irg4ph50kd.pdf Size:227K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91575BIRG4PH50KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.77V Combines low conduction losses with highG switching speed

9.34. irg4pc60upbf.pdf Size:231K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

9.35. auirg4pc40s-e.pdf Size:408K _international_rectifier

IRG4PF50W
IRG4PF50W

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

9.36. irg4pc60f-p.pdf Size:118K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

9.37. irg4ph50k.pdf Size:68K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 9.1576IRG4PH50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200Vtsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77Vswitching speedG Latest generation design provides tighter@VGE = 15V, IC = 24AEparameter distr

9.38. irg4pc50s.pdf Size:167K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC50S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

9.39. irg4ph40ud.pdf Size:339K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat

9.40. irg4pc30w.pdf Size:121K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

9.41. irg4pc60f.pdf Size:221K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

9.42. irg4psc71k.pdf Size:280K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction

9.43. irg4pc50u.pdf Size:153K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

9.44. irg4pc40fd.pdf Size:224K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighterG parameter distribution and high

9.45. irg4ph40kd.pdf Size:219K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91577BIRG4PH40KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.74V Combines low conduction losses with highG switching speed

9.46. irg4pc40k.pdf Size:125K _international_rectifier

IRG4PF50W
IRG4PF50W

D . IRG4PC40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Ge

9.47. irg4pc50f.pdf Size:152K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

9.48. irg4ph30kd.pdf Size:215K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91579AIRG4PH30KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 3.10V Combines low conduction losses with highG switching speed

9.49. irg4pc50kd.pdf Size:31K _international_rectifier

IRG4PF50W
IRG4PF50W

PD -91582BIRG4PC50KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600Voperating frequencies >5.0 kHz, and Short Circuit Ratedto 10s @125C, VGE = 15VVCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameterGdistribution and higher

9.50. irg4pc50s-p.pdf Size:144K _international_rectifier

IRG4PF50W
IRG4PF50W

D IRG4PC50S-PStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

9.51. irg4pc60u-p.pdf Size:122K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

9.52. irg4pc40ud.pdf Size:238K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 9.1467DIRG4PC40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.72V Generation 4 IGBT design provides tighterG parameter distribution a

9.53. irg4pc50k.pdf Size:121K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91583BIRG4PC50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 1.84VG switching speed Latest generation design

9.54. irg4pc40f.pdf Size:150K _international_rectifier

IRG4PF50W
IRG4PF50W

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VGE

9.55. irg4psc71u.pdf Size:141K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct

9.56. irg4ph50u.pdf Size:137K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

9.57. irg4pc50ud.pdf Size:219K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

9.58. irg4ph50ud.pdf Size:229K _international_rectifier

IRG4PF50W
IRG4PF50W

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

Datasheet: IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG7R313U , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U .

 

 
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