All IGBT. DIM1500ASM33-TL001 Datasheet

 

DIM1500ASM33-TL001 IGBT. Datasheet pdf. Equivalent

Type Designator: DIM1500ASM33-TL001

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 15600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 1500

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 430

Package: MODULE

DIM1500ASM33-TL001 Transistor Equivalent Substitute - IGBT Cross-Reference Search

DIM1500ASM33-TL001 IGBT. Datasheet pdf. Equivalent

Type Designator: DIM1500ASM33-TL001

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 15600

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 1500

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 430

Package: MODULE

DIM1500ASM33-TL001 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1500ASM33-TL001 Datasheet (PDF)

0.1. dim1500asm33-tl001.pdf Size:487K _dynex

DIM1500ASM33-TL001
DIM1500ASM33-TL001

DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10.2kV Isolation IC (max) 1500A  10µs Short Circuit Withstand IC(PK) (max) 3000A  High Thermal Cycling Capability * Measured at the auxiliary terminals  High Current Density Enhanced DMOS SPT  I

0.2. dim1500asm33-ts001.pdf Size:486K _dynex

DIM1500ASM33-TL001
DIM1500ASM33-TL001

DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V  10µs Short Circuit Withstand IC (max) 1500A  High Thermal Cycling Capability IC(PK) (max) 3000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base With A

 7.1. dim1500esm33-tl.pdf Size:500K _dynex

DIM1500ASM33-TL001
DIM1500ASM33-TL001

DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V  10µs Short Circuit Withstand IC (max) 1500A  High Thermal Cycling Capability IC(PK) (max) 3000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base With

7.2. dim1500esm33-ts.pdf Size:499K _dynex

DIM1500ASM33-TL001
DIM1500ASM33-TL001

DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1500A  Soft Punch Through Silicon IC(PK) (max) 3000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals 

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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