DIM400GDM33-F Datasheet and Replacement

DIM400GDM33-F000 Dual Switch IGBT Module Replaces DS5616-2.1 DS5616-3 February 2014 (LN31315) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM400GCM33-F000 IGBT Chopper Module Replaces DS5863-1.1 DS5863-2 February 2011 (LN28080) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals Lea

Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-1 DS6111-2 January 2014 (LN31266) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 400A High Current Density Enhanced DMOS SPT IC(PK) (max) 800A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary te

DIM400PHM17-A000 IGBT Half Bridge Module Replaces DS5561-1.3 DS5561.2 January 2014 (LN31262) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary

DIM400XCM33-F000 IGBT Chopper Module Replaces DS5938-1.0 DS5938-2 May 2011 (LN28404) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead Fre

Data DIM400XCM45-TS001 IGBT Chopper Module Replaces DS6110-1 DS6110-2 January 2014 (LN31265) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 400A High Thermal Cycling Capability IC(PK) (max) 800A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.528FEATURES 6 x O70.216VCES 1700V 10s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth0.240IC (max) 400A High Thermal Cycling Capability max 8IC(PK) (max) 800A 0.253 Non Punch Through Silicon * Measured at the power

DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

DIM400DDS12-A000 Dual Switch IGBT Module Replaces DS5841-1.1 DS5841-2 November 2009 (LN26744) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

DIM400NSM33-F000 Single Switch IGBT Module Replaces DS5883-3 DS5883-4 October 2011 (LN28811) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 400A Soft Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57I

DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 (LN27710) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th