DIM500GDM33-TS IGBT. Datasheet pdf. Equivalent
Type Designator: DIM500GDM33-TS
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 400 nS
Qgⓘ - Total Gate Charge, typ: 10000 nC
Package: MODULE
DIM500GDM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search
DIM500GDM33-TS Datasheet (PDF)
dim500gdm33-ts.pdf
DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-1 DS6097-2 January 2014 (LN31252) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary term
dim500gdm33-tl.pdf
DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 (LN31251) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated
dim500gcm33-tl.pdf
DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 (LN31264) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS
dim500gcm33-ts.pdf
DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-1 DS6098-2 January 2014 (LN31263) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminal
Datasheet: DIM400PBM17-A , DIM400PHM17-A , DIM400XCM33-F , DIM400XCM45-TS , DIM400XCM45-TS001 , DIM500GCM33-TL , DIM500GCM33-TS , DIM500GDM33-TL , TGPF30N40P , DIM600DCM17-A , DIM600DDM17-A , DIM600DDS12-A , DIM800DCM12-A , DIM800DCM17-A , DIM800DCS12-A , DIM800DDM12-A , DIM800DDM17-A .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2