DIM600DDM17-A IGBT. Datasheet pdf. Equivalent
Type Designator: DIM600DDM17-A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Package: MODULE
DIM600DDM17-A Transistor Equivalent Substitute - IGBT Cross-Reference Search
DIM600DDM17-A Datasheet (PDF)
dim600ddm17-a.pdf
DIM600DDM17-A000 Dual Switch IGBT Module Replaces DS5596-2 DS5596-3 December 2013 (LN31169) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 600A max 8 Non Punch Through Silicon 0.2 0.253 57 IC(PK) (ma
dim600dds12-a.pdf
DIM600DDS12-A000 Dual Switch IGBT Module Replaces DS5868-2 DS5868-3 March 2014 (LN31354) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 600A max 8 Non Punch Through Silicon 0.2 0.253 57 IC(PK) (max)
dim600dcm17-a.pdf
DIM600DCM17-A000 IGBT Chopper Module Replaces DS5491-4.2 DS5491-5 March 2011 (LN26753) FEATURES KEY PARAMETERS 0.5286 x O70.216 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V 0.2 High Thermal Cycling Capability screwing depth40IC (max) 600A max 8 Non Punch Through Silicon 0.253IC(PK) (max) 1200A Isolated AlSiC Base Wi
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2