All IGBT. DIM800DCM17-A Datasheet

 

DIM800DCM17-A Datasheet and Replacement


   Type Designator: DIM800DCM17-A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 6940 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 250 nS
   Package: MODULE
      - IGBT Cross-Reference

 

DIM800DCM17-A Datasheet (PDF)

 ..1. Size:445K  dynex
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DIM800DCM17-A

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

 4.1. Size:201K  dynex
dim800dcm12-a.pdf pdf_icon

DIM800DCM17-A

DIM800DCM12-A000DIM800DCM12-A000IGBT Chopper ModuleReplaces July 2002 version DS5548-2.0 DS5548-FEATURES KEY PARAMETERSVCES 1200V 10s Short Circuit WithstandVCE(sat)* (typ) 2.2V High Thermal Cycling CapabilityIC (max) 800AIC(PK) (max) 1600A Non Punch Through Silicon*(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

 6.1. Size:814K  dynex
dim800dcs12-a.pdf pdf_icon

DIM800DCM17-A

DIM800DCS12-A000IGBT Chopper ModuleDS5839- 1.1 June 2005 (LN24042)KEY PARAMETERSFEATURESVCES 1200V 10s Short Circuit WithstandVCE (sat)* (typ) 2.2VIC (max) 800A Non Punch Through SiliconIC(PK) (max) 1600A Isolated Copper Baseplate*(measured at the power busbars and not the auxiliary terminals) Lead Free constructionAPPLICATIONS Chopper DC Mo

 7.1. Size:389K  dynex
dim800dds12-a.pdf pdf_icon

DIM800DCM17-A

DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK)

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APT40GP90J | APT20GT60KR | IXXA30N65C3HV | STGF20M65DF2 | NGTB03N60R2DT4G | BSM15GD120DN2 | FD400R33KF2C

Keywords - DIM800DCM17-A transistor datasheet

 DIM800DCM17-A cross reference
 DIM800DCM17-A equivalent finder
 DIM800DCM17-A lookup
 DIM800DCM17-A substitution
 DIM800DCM17-A replacement

 

 
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