DIM800XSM45-TS Datasheet and Replacement

Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 (LN30438) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A High Current Density Enhanced DMOS * Measured at th

Data DIM800XSM45-TS001 Single Switch IGBT Module Replaces DS6090-3 DS6090-4 February 2014 (LN31312) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A High Current Density Enhanced DMOS SPT IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the auxi

DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 (LN28652) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK)

DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.2 DS5815-3 September 2012 (LN29759) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals L

DIM800NSM33-F000 Single Switch IGBT Module Replaces DS5615-6 DS5615-7 September 2012 (LN29760) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 800A Soft Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 (LN27682) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM800DCS12-A000IGBT Chopper ModuleDS5839- 1.1 June 2005 (LN24042)KEY PARAMETERSFEATURESVCES 1200V 10s Short Circuit WithstandVCE (sat)* (typ) 2.2VIC (max) 800A Non Punch Through SiliconIC(PK) (max) 1600A Isolated Copper Baseplate*(measured at the power busbars and not the auxiliary terminals) Lead Free constructionAPPLICATIONS Chopper DC Mo

DIM800DCM12-A000DIM800DCM12-A000IGBT Chopper ModuleReplaces July 2002 version DS5548-2.0 DS5548-FEATURES KEY PARAMETERSVCES 1200V 10s Short Circuit WithstandVCE(sat)* (typ) 2.2V High Thermal Cycling CapabilityIC (max) 800AIC(PK) (max) 1600A Non Punch Through Silicon*(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 (LN27717) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (

DIM800FSS12-A000 Single Switch IGBT Module Replaces DS5867-1.1 DS5867-2 November 2010 (LN27709) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 1600A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57I