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2PG401 Spec and Replacement


   Type Designator: 2PG401
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 15 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 8 V
   |Ic| ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 1400 pF
   Package: IPAK

 2PG401 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG401 specs

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2PG401

IGBTs 2PG401 Insulated Gate Bipolar Transistor Features unit mm High breakdown voltage VCES = 400V Allowing to control large current IC(peak) = 130A 7.0 0.3 3.5 0.2 Allowing to provide with the surface mounting package 3.0 0.2 Applications For flash-light for use in a camera 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Absolute Maximum Ratings (TC = 25 C) 2.3 0.2 Paramet... See More ⇒

 9.1. Size:31K  1
 2pg402.pdf pdf_icon

2PG401

IGBTs 2PG402 Insulated Gate Bipolar Transistor Features unit mm High breakdown voltage VCES = 400V 6.5 0.1 Allowing to control large current IC(peak) = 130A 5.3 0.1 4.35 0.1 Housed in the surface mounting package 3.0 0.1 Applications For flash-light for use in a camera Absolute Maximum Ratings (TC = 25 C) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.... See More ⇒

Specs: HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , IRGP4066D , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 .

Keywords - 2PG401 transistor spec

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