2PG401 Datasheet. Specs and Replacement

Type Designator: 2PG401  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 15 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 8 V

|Ic| ⓘ - Maximum Collector Current: 5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃

tr ⓘ - Rise Time, typ: 130 nS

Coesⓘ - Output Capacitance, typ: 1400 pF

Package: IPAK

 2PG401 Substitution

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2PG401 datasheet

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2PG401

IGBTs 2PG401 Insulated Gate Bipolar Transistor Features unit mm High breakdown voltage VCES = 400V Allowing to control large current IC(peak) = 130A 7.0 0.3 3.5 0.2 Allowing to provide with the surface mounting package 3.0 0.2 Applications For flash-light for use in a camera 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Absolute Maximum Ratings (TC = 25 C) 2.3 0.2 Paramet... See More ⇒

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 2pg402.pdf pdf_icon

2PG401

IGBTs 2PG402 Insulated Gate Bipolar Transistor Features unit mm High breakdown voltage VCES = 400V 6.5 0.1 Allowing to control large current IC(peak) = 130A 5.3 0.1 4.35 0.1 Housed in the surface mounting package 3.0 0.1 Applications For flash-light for use in a camera Absolute Maximum Ratings (TC = 25 C) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.... See More ⇒

Specs: HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975, 2N6976, 2N6977, 2N6978, 2PG352, IRGP4066D, 2PG402, 2SH11, 2SH12, 2SH13, 2SH14, 2SH15, 2SH16, 2SH17

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