All IGBT. 2PG401 Datasheet

 

2PG401 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2PG401
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 15 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 8 V
   |Ic|ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 1400 pF
   Package: IPAK

 2PG401 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG401 Datasheet (PDF)

 ..1. Size:19K  1
 2pg401.pdf

2PG401

IGBTs2PG401Insulated Gate Bipolar Transistor Featuresunit: mm High breakdown voltage: VCES = 400V Allowing to control large current: IC(peak) = 130A7.00.3 3.50.2 Allowing to provide with the surface mounting package3.00.2 Applications For flash-light for use in a camera1.10.1 0.850.10.750.1 0.40.1 Absolute Maximum Ratings (TC = 25C)2.30.2Paramet

 9.1. Size:31K  1
 2pg402.pdf

2PG401 2PG401

IGBTs2PG402Insulated Gate Bipolar Transistor Featuresunit: mm High breakdown voltage: VCES = 400V6.5 0.1 Allowing to control large current: IC(peak) = 130A5.3 0.14.35 0.1 Housed in the surface mounting package3.0 0.1 Applications For flash-light for use in a camera Absolute Maximum Ratings (TC = 25C)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.

Datasheet: HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , JT075N065WED , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 .

 

 
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