All IGBT. MG12400D-BN2MM Datasheet

 

MG12400D-BN2MM IGBT. Datasheet pdf. Equivalent


   Type Designator: MG12400D-BN2MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1925 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 580 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 3800 nC
   Package: MODULE

 MG12400D-BN2MM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG12400D-BN2MM Datasheet (PDF)

 ..1. Size:1363K  littelfuse
 mg12400d-bn2mm.pdf

MG12400D-BN2MM MG12400D-BN2MM

Power Module1200V 400A IGBT ModuleRoHSMG12400D-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplications

 8.1. Size:1792K  littelfuse
 mg1240h-xbn2mm.pdf

MG12400D-BN2MM MG12400D-BN2MM

Power Module1200V 40A IGBT ModuleRoHSMG1240H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

 9.1. Size:1679K  littelfuse
 mg12450wb-bn2mm.pdf

MG12400D-BN2MM MG12400D-BN2MM

Power Module1200V 450A IGBT ModuleRoHSMG12450WB-BN2MMFeatures IGBT3 CHIP(Trench+Field Free wheeling diodes Stop technology) with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short tail currentApplications AC motor control Photovoltaic/Fuel cell Mot

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