MG1250H-XN2MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG1250H-XN2MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 260
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 75
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 30
Total Gate Charge (Qg), typ, nC: 470
Package: MODULE
MG1250H-XN2MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG1250H-XN2MM Datasheet (PDF)
mg1250h-xn2mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250H-XN2MMFeatures High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curren
mg1250s-ba1mm.pdf
Power Module1200V 50A IGBT ModuleRoHSMG1250S-BA1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg1250w-xbn2mm.pdf
Power ModulePower Module1200V 50A IGBT ModuleRoHSMG1250W-XBN2MM Features High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard whole drive package with insulated Low saturation voltage copper base plate and and positive temperature soldering pins for PC
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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