MG15Q6ES42 Datasheet and Replacement
Type Designator: MG15Q6ES42
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
MG15Q6ES42 Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGH28N140B3H1 | IXBH2N250 | FB30R06W1E3 | CM2400HC-34H | IRGI4090 | DIM500GDM33-TS | FD400R33KF2C
Keywords - MG15Q6ES42 transistor datasheet
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History: IXGH28N140B3H1 | IXBH2N250 | FB30R06W1E3 | CM2400HC-34H | IRGI4090 | DIM500GDM33-TS | FD400R33KF2C
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