MG15Q6ES42 Datasheet and Replacement
Type Designator: MG15Q6ES42
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG15Q6ES42 substitution
MG15Q6ES42 Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: MG150J1BS11 , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , NGD8201N , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , MG17300D-BN4MM .
History: IXXX300N60C3 | IXYX100N120C3 | IXBP5N160G | MMG200DR120UZK | AOK60B65H2AL | MMG300Q060B6R | IXSK80N60B
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History: IXXX300N60C3 | IXYX100N120C3 | IXBP5N160G | MMG200DR120UZK | AOK60B65H2AL | MMG300Q060B6R | IXSK80N60B
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