MG17225WB-BN4MM Datasheet and Replacement
Type Designator: MG17225WB-BN4MM
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 325 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Package: MODULE
- IGBT Cross-Reference
MG17225WB-BN4MM Datasheet (PDF)
mg17225wb-bn4mm.pdf

Power Module1700V 225A IGBT ModuleRoHSMG17225WB-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications AC motor control Inverter and power suppli
mg17200d-bn4mm.pdf

Power Module1700V 200A IGBT ModuleRoHSMG17200D-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications High frequency switching Motion/servo con
Datasheet: MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , NGD8201N , MG17300D-BN4MM , MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 .
History: IXXH100N60B3
Keywords - MG17225WB-BN4MM transistor datasheet
MG17225WB-BN4MM cross reference
MG17225WB-BN4MM equivalent finder
MG17225WB-BN4MM lookup
MG17225WB-BN4MM substitution
MG17225WB-BN4MM replacement
History: IXXH100N60B3



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