MG17225WB-BN4MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG17225WB-BN4MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 325 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Qgⓘ - Total Gate Charge, typ: 2600 nC
Package: MODULE
MG17225WB-BN4MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG17225WB-BN4MM Datasheet (PDF)
mg17225wb-bn4mm.pdf
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mg17200d-bn4mm.pdf
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