IRG4PH50S IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4PH50S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 57 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.47 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Qgⓘ - Total Gate Charge, typ: 167 nC
Package: TO247AC
IRG4PH50S Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4PH50S Datasheet (PDF)
irg4ph50s.pdf
PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (
irg4ph50s-e.pdf
PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (
auirg4ph50s.pdf
AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (
auirg4ph50s.pdf
AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (
Datasheet: IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , CRG40T60AK3HD , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , IRG4PSH71K , IRG4PSH71KD .
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