IRG4PH50S Datasheet and Replacement

PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

PD- 91575BIRG4PH50KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.77V Combines low conduction losses with highG switching speed

PD- 95189IRG4PH50KDPbFShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeatures C High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77VG switching speed Tighter parameter distribution a

PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous gener

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

PD - 9.1576IRG4PH50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200Vtsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77Vswitching speedG Latest generation design provides tighter@VGE = 15V, IC = 24AEparameter distr