MG25N2YS1 IGBT. Datasheet pdf. Equivalent
Type Designator: MG25N2YS1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG25N2YS1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG25N2YS1 Datasheet (PDF)
Datasheet: MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , MG200Q1US51 , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MBQ50T65FESC , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 , MG300N1US1 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2