MG25N2YS1 Specs and Replacement
Type Designator: MG25N2YS1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MG25N2YS1 Substitution - IGBT ⓘ Cross-Reference Search
MG25N2YS1 datasheet
Specs: MG200J6ES60, MG200J6ES61, MG200Q1US41, MG200Q1US51, MG200Q2YS40, MG200Q2YS50, MG200Q2YS65H, MG25J6ES40, IRG4PC50W, MG25Q1BS11, MG25Q2YS40, MG25Q6ES42, MG25Q6ES50A, MG25Q6ES51, MG300J2YS40, MG300J2YS50, MG300N1US1
Keywords - MG25N2YS1 transistor spec
MG25N2YS1 cross reference
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