MG25Q2YS40 Datasheet and Replacement
Type Designator: MG25Q2YS40
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG25Q2YS40 substitution
MG25Q2YS40 Datasheet (PDF)
Datasheet: MG200Q1US41 , MG200Q1US51 , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , FGL60N100BNTD , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 , MG300N1US1 , MG300Q1US11 , MG300Q2YS40 .
History: APT15GP60KG | IXEH40N120D1
Keywords - MG25Q2YS40 transistor datasheet
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History: APT15GP60KG | IXEH40N120D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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