All IGBT. MG25Q6ES50A Datasheet

 

MG25Q6ES50A IGBT. Datasheet pdf. Equivalent


   Type Designator: MG25Q6ES50A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Package: MODULE

 MG25Q6ES50A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG25Q6ES50A Datasheet (PDF)

 ..1. Size:116K  toshiba
 mg25q6es50a.pdf

MG25Q6ES50A MG25Q6ES50A

 5.1. Size:113K  toshiba
 mg25q6es51.pdf

MG25Q6ES50A MG25Q6ES50A

 6.1. Size:123K  toshiba
 mg25q6es42.pdf

MG25Q6ES50A MG25Q6ES50A

 9.1. Size:118K  toshiba
 mg25q2ys40.pdf

MG25Q6ES50A MG25Q6ES50A

 9.2. Size:104K  toshiba
 mg25q1bs11.pdf

MG25Q6ES50A MG25Q6ES50A

Datasheet: MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , GT30J127 , MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 , MG300N1US1 , MG300Q1US11 , MG300Q2YS40 , MG300Q2YS50 , MG50J1BS11 .

 

 
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