MG25Q6ES50A Datasheet and Replacement

   Type Designator: MG25Q6ES50A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Package: MODULE
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