MG25Q6ES51 PDF and Equivalents Search

 

MG25Q6ES51 Specs and Replacement

Type Designator: MG25Q6ES51

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Package: MODULE

 MG25Q6ES51 Substitution

- IGBT ⓘ Cross-Reference Search

 

MG25Q6ES51 datasheet

 ..1. Size:113K  toshiba
 mg25q6es51.pdf pdf_icon

MG25Q6ES51

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 5.1. Size:116K  toshiba
 mg25q6es50a.pdf pdf_icon

MG25Q6ES51

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 6.1. Size:123K  toshiba
 mg25q6es42.pdf pdf_icon

MG25Q6ES51

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 9.1. Size:118K  toshiba
 mg25q2ys40.pdf pdf_icon

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Specs: MG200Q2YS50, MG200Q2YS65H, MG25J6ES40, MG25N2YS1, MG25Q1BS11, MG25Q2YS40, MG25Q6ES42, MG25Q6ES50A, AOK40B65H2AL, MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, MG50J2YS50

Keywords - MG25Q6ES51 transistor spec

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