MG25Q6ES51 Datasheet and Replacement
Type Designator: MG25Q6ES51
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG25Q6ES51 substitution
MG25Q6ES51 Datasheet (PDF)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Keywords - MG25Q6ES51 transistor datasheet
MG25Q6ES51 cross reference
MG25Q6ES51 equivalent finder
MG25Q6ES51 lookup
MG25Q6ES51 substitution
MG25Q6ES51 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc1913 | c2314 transistor | c2482 transistor | 2sc1222 replacement | 2sa725 | c5242 transistor | 2sa726 replacement | a1941 datasheet