All IGBT. MG25Q6ES51 Datasheet

 

MG25Q6ES51 IGBT. Datasheet pdf. Equivalent


   Type Designator: MG25Q6ES51
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Package: MODULE

 MG25Q6ES51 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG25Q6ES51 Datasheet (PDF)

 ..1. Size:113K  toshiba
 mg25q6es51.pdf

MG25Q6ES51 MG25Q6ES51

 5.1. Size:116K  toshiba
 mg25q6es50a.pdf

MG25Q6ES51 MG25Q6ES51

 6.1. Size:123K  toshiba
 mg25q6es42.pdf

MG25Q6ES51 MG25Q6ES51

 9.1. Size:118K  toshiba
 mg25q2ys40.pdf

MG25Q6ES51 MG25Q6ES51

 9.2. Size:104K  toshiba
 mg25q1bs11.pdf

MG25Q6ES51 MG25Q6ES51

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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