MG300Q2YS40 Datasheet and Replacement
Type Designator: MG300Q2YS40
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
MG300Q2YS40 Datasheet (PDF)
mg300q2ys50.pdf

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max.) f Inductive load Low saturation voltage : V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
mmg300q060b6n.pdf

MMG300Q060B6N 600V 300A IGBT Module JULY 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GQ Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25C unless otherw
Datasheet: MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 , MG300N1US1 , MG300Q1US11 , IKW40T120 , MG300Q2YS50 , MG50J1BS11 , MG50J2YS50 , MG50J6ES50 , MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 .
History: MITA10WB1200TMH | NGTB40N120SWG | RJP60V0DPM | GT10G101 | MG300N1US1 | JNG30T60FS | SGT40N60FD2PT
Keywords - MG300Q2YS40 transistor datasheet
MG300Q2YS40 cross reference
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History: MITA10WB1200TMH | NGTB40N120SWG | RJP60V0DPM | GT10G101 | MG300N1US1 | JNG30T60FS | SGT40N60FD2PT



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