MG300Q2YS50 PDF and Equivalents Search

 

MG300Q2YS50 Specs and Replacement

Type Designator: MG300Q2YS50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 400 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

 MG300Q2YS50 Substitution

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MG300Q2YS50 datasheet

 ..1. Size:83K  toshiba
mg300q2ys50.pdf pdf_icon

MG300Q2YS50

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max.) f Inductive load Low saturation voltage V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒

 5.1. Size:143K  toshiba
mg300q2ys40.pdf pdf_icon

MG300Q2YS50

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 8.1. Size:111K  toshiba
mg300q1us11.pdf pdf_icon

MG300Q2YS50

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 8.2. Size:880K  macmic
mmg300q060b6n.pdf pdf_icon

MG300Q2YS50

MMG300Q060B6N 600V 300A IGBT Module JULY 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GQ Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25 C unless otherw... See More ⇒

Specs: MG25Q6ES42, MG25Q6ES50A, MG25Q6ES51, MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, SGT40N60FD2PT, MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A

Keywords - MG300Q2YS50 transistor spec

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