MG300Q2YS50 Specs and Replacement
Type Designator: MG300Q2YS50
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Package: MODULE MG300Q2YS50 Substitution - IGBT ⓘ Cross-Reference Search
MG300Q2YS50 datasheet
mg300q2ys50.pdf
MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max.) f Inductive load Low saturation voltage V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒
mmg300q060b6n.pdf
MMG300Q060B6N 600V 300A IGBT Module JULY 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GQ Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25 C unless otherw... See More ⇒
Specs: MG25Q6ES42, MG25Q6ES50A, MG25Q6ES51, MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, SGT40N60FD2PT, MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A
Keywords - MG300Q2YS50 transistor spec
MG300Q2YS50 cross reference
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