MG50J1BS11 Specs and Replacement
Type Designator: MG50J1BS11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: MODULE MG50J1BS11 Substitution - IGBT ⓘ Cross-Reference Search
MG50J1BS11 datasheet
mmg50j120uz.pdf
MMG50J120UZ 1200V 50A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 Package APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating IGBT ... See More ⇒
mmg50j120uz6tc.pdf
MMG50J120UZ6TC 1200V 50A IGBT Module June 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175 APPLICATIONS AC motor control Motion/servo control Inverter an... See More ⇒
mmg50j120u.pdf
MMG50J120U 1200V 50A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 Package APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating IGBT-i... See More ⇒
Specs: MG25Q6ES50A, MG25Q6ES51, MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, STGW60V60DF, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51
Keywords - MG50J1BS11 transistor spec
MG50J1BS11 cross reference
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History: APT65GP60L2DF2
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