MG50J1BS11 IGBT. Datasheet pdf. Equivalent
Type Designator: MG50J1BS11
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG50J1BS11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG50J1BS11 Datasheet (PDF)
mmg50j120uz.pdf
MMG50J120UZ1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT
mmg50j120uz6tc.pdf
MMG50J120UZ6TC1200V 50A IGBT ModuleJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175APPLICATIONS AC motor control Motion/servo control Inverter an
mmg50j120u.pdf
MMG50J120U1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT-i
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