MG50J6ES50 PDF and Equivalents Search

 

MG50J6ES50 Specs and Replacement

Type Designator: MG50J6ES50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: MODULE

 MG50J6ES50 Substitution

- IGBTⓘ Cross-Reference Search

 

MG50J6ES50 datasheet

 ..1. Size:134K  toshiba
 mg50j6es50.pdf pdf_icon

MG50J6ES50

... See More ⇒

 9.1. Size:130K  toshiba
 mg50j2ys50.pdf pdf_icon

MG50J6ES50

... See More ⇒

 9.2. Size:97K  toshiba
 mg50j1bs11.pdf pdf_icon

MG50J6ES50

... See More ⇒

 9.3. Size:445K  macmic
 mmg50j120uz.pdf pdf_icon

MG50J6ES50

MMG50J120UZ 1200V 50A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 Package APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating IGBT ... See More ⇒

SHOW MORE

Specs: MG300J2YS40, MG300J2YS50, MG300N1US1, MG300Q1US11, MG300Q2YS40, MG300Q2YS50, MG50J1BS11, MG50J2YS50, GT60N321, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, MG75J1BS11, MG75J1ZS40

Keywords - MG50J6ES50 transistor spec

 MG50J6ES50 cross reference
 MG50J6ES50 equivalent finder
 MG50J6ES50 lookup
 MG50J6ES50 substitution
 MG50J6ES50 replacement

 

 

 

 

↑ Back to Top
.