MG50Q6ES50A PDF and Equivalents Search

 

MG50Q6ES50A Specs and Replacement

Type Designator: MG50Q6ES50A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

Package: MODULE

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MG50Q6ES50A datasheet

 ..1. Size:115K  toshiba
 mg50q6es50a.pdf pdf_icon

MG50Q6ES50A

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 6.1. Size:262K  toshiba
 mg50q6es40.pdf pdf_icon

MG50Q6ES50A

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 9.1. Size:89K  toshiba
 mg50q2ys50.pdf pdf_icon

MG50Q6ES50A

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. ... See More ⇒

 9.2. Size:105K  toshiba
 mg50q1bs11.pdf pdf_icon

MG50Q6ES50A

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Specs: MG300Q2YS50, MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, IXRH40N120, MG600Q1US51, MG75J1BS11, MG75J1ZS40, MG75J1ZS50, MG75J2YS50, MG75J2YS91, MG75J6ES50, MG75Q1BS11

Keywords - MG50Q6ES50A transistor spec

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