MIG10Q806H Specs and Replacement
Type Designator: MIG10Q806H
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 82 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Package: MODULE MIG10Q806H Substitution - IGBTⓘ Cross-Reference Search
MIG10Q806H datasheet
Specs: MG75J6ES50, MG75Q1BS11, MG75Q2YS40, MG75Q2YS42, MG75Q2YS50, MG75Q2YS51, MIEB100W1200DPFTEH, MIEB101W1200DPFEH, FGPF4533, MIG10Q806HA, MIG50Q201H, MITA150H1700TEH, MIXA100PF1200TMH, MIXA100PM650TMI, MIXA150Q1200VA, MIXA150R1200VA, MIXA20WB1200TMI
Keywords - MIG10Q806H transistor spec
MIG10Q806H cross reference
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MIG10Q806H replacement
History: IKB30N65ES5 | IKB15N65EH5
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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