MIG10Q806H Datasheet and Replacement
Type Designator: MIG10Q806H
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 82 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Package: MODULE
- IGBT Cross-Reference
MIG10Q806H Datasheet (PDF)
Datasheet: MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , RJP6065DPM , MIG10Q806HA , MIG50Q201H , MITA150H1700TEH , MIXA100PF1200TMH , MIXA100PM650TMI , MIXA150Q1200VA , MIXA150R1200VA , MIXA20WB1200TMI .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - MIG10Q806H transistor datasheet
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History: AOTF5B65M2 | MMG300D120B6UC
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