MIXA100PM650TMI IGBT. Datasheet pdf. Equivalent
Type Designator: MIXA100PM650TMI
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Qgⓘ - Total Gate Charge, typ: 140 nC
Package: MODULE
MIXA100PM650TMI Transistor Equivalent Substitute - IGBT Cross-Reference Search
MIXA100PM650TMI Datasheet (PDF)
mixa100pm650tmi.pdf
MIXA100PM650TMItentativeVCES = 2x 650VXPT IGBT ModuleI= 150AC25VCE(sat) = 1.6VPhase leg with Multi LevelPart numberMIXA100PM650TMIBackside: isolatedNTh1E4 G4 E3 G3 E2 G2 E1 G1Th2UFeatures / Advantages: Applications: Package: MiniPack2B High level of integration AC motor drives Isolation Voltage: V~3000 Rugged XPT design (Xtreme light Punch Thr
mixa100pf1200tmh.pdf
MIXA100PF1200TMHpreliminaryVCES = 2x1200 VXPT IGBT ModuleI= 155 AC25VCE(sat) = 1.8 VPhase leg + free wheeling Diodes + NTCPart numberMIXA100PF1200TMHBackside: isolated87 6 5 42 319Features / Advantages: Applications: Package: High level of integration AC motor drives Housing: MiniPack2 Rugged XPT design (Xtreme light Punch Through) Pumps, Fa
mixa100w1200teh.pdf
MIXA100W1200TEHSix-Pack VCES = 1200 VIC25 = 155 AXPT IGBTVCE(sat) = 1.8 VPart name (Marking on product)MIXA100W1200TEH16, 17, 1830, 31, 32D1 D3 D5T1 T3 T55 91196 10227 24 2128 25 22NTCE7287329 26 23Pin configuration see outlines.D2 D4 D620T2 T4 T637 114 81233, 34, 35 13, 14, 15Features: Application: Package: Easy paralleling due t
Datasheet: MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H , MIG10Q806HA , MIG50Q201H , MITA150H1700TEH , MIXA100PF1200TMH , GT50JR22 , MIXA150Q1200VA , MIXA150R1200VA , MIXA20WB1200TMI , MIXA225PF1200TSF , MIXA225RF1200TSF , MIXA300PF1200TSF , MIXA30WB1200TMI , MIXA450PF1200TSF .
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