All IGBT. MIXA600CF650TSF Datasheet

 

MIXA600CF650TSF Datasheet and Replacement


   Type Designator: MIXA600CF650TSF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 720 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MIXA600CF650TSF Datasheet (PDF)

 0.1. Size:119K  ixys
 mixa600cf650tsf.pdf pdf_icon

MIXA600CF650TSF

MIXA600CF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon collector + free wheeling diodesPart numberMIXA600CF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indu

 7.1. Size:119K  ixys
 mixa600af650tsf.pdf pdf_icon

MIXA600CF650TSF

MIXA600AF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon emitter + free wheeling diodesPart numberMIXA600AF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indust

 7.2. Size:119K  ixys
 mixa600pf650tsf.pdf pdf_icon

MIXA600CF650TSF

MIXA600PF650TSFtentativeVCES = 2x 650VXPT IGBT ModuleI= 720AC25VCE(sat) = 1.65 VPhase leg + free wheeling Diodes + NTCPart numberMIXA600PF650TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module requi

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Keywords - MIXA600CF650TSF transistor datasheet

 MIXA600CF650TSF cross reference
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 MIXA600CF650TSF replacement

 

 
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