MP6750 IGBT. Datasheet pdf. Equivalent
Type Designator: MP6750
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 55 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
MP6750 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MP6750 Datasheet (PDF)
mp6750.pdf
MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Unit: mmMotor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE (sat) = 4.0V (Max) (IC = 15A) High speed : t = 0.35s (Max) (I = 15A) f C t = 0.15s (Max) (I = 15A) rr F JEDE
mp6753.pdf
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mp6752.pdf
MP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching Applications Unit in mmMotor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE(sat) = 4.0V (max.) (IC = 20A) High speed: t = 0.35s (max.) (I = 20A) f Ct = 0.15s (max.) (I = 20A) r
Datasheet: MIXA81WB1200TEH , MIXD200W650TEH , MIXD50W650TED , MIXD600PF650TSF , MIXD80PM650TMI , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , IRGP4086 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , NXH80T120L2Q0PG , PDMB200E6 .
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