MP6750 Specs and Replacement
Type Designator: MP6750
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 55 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MP6750 Substitution - IGBTⓘ Cross-Reference Search
MP6750 datasheet
mp6750.pdf
MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Unit mm Motor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage VCE (sat) = 4.0V (Max) (IC = 15A) High speed t = 0.35 s (Max) (I = 15A) f C t = 0.15 s (Max) (I = 15A) rr F JEDE... See More ⇒
mp6753.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
mp6752.pdf
MP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching Applications Unit in mm Motor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage VCE(sat) = 4.0V (max.) (IC = 20A) High speed t = 0.35 s (max.) (I = 20A) f C t = 0.15 s (max.) (I = 20A) r... See More ⇒
Specs: MIXA81WB1200TEH, MIXD200W650TEH, MIXD50W650TED, MIXD600PF650TSF, MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, IKW75N60T, MP6752, MP6753, MP6757, MSAGA11F120D, MUBW30-12A6, NXH80T120L2Q0, NXH80T120L2Q0PG, PDMB200E6
Keywords - MP6750 transistor spec
MP6750 cross reference
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History: MSAGA11F120D | NXH80T120L2Q0 | MIXG180W1200TEH | MIXG240W1200TEH
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