MP6752 Specs and Replacement
Type Designator: MP6752
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MP6752 Substitution - IGBTⓘ Cross-Reference Search
MP6752 datasheet
mp6752.pdf
MP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching Applications Unit in mm Motor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage VCE(sat) = 4.0V (max.) (IC = 20A) High speed t = 0.35 s (max.) (I = 20A) f C t = 0.15 s (max.) (I = 20A) r... See More ⇒
mp6750.pdf
MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Unit mm Motor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage VCE (sat) = 4.0V (Max) (IC = 15A) High speed t = 0.35 s (Max) (I = 15A) f C t = 0.15 s (Max) (I = 15A) rr F JEDE... See More ⇒
mp6753.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
Specs: MIXD200W650TEH, MIXD50W650TED, MIXD600PF650TSF, MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, IRG7IC28U, MP6753, MP6757, MSAGA11F120D, MUBW30-12A6, NXH80T120L2Q0, NXH80T120L2Q0PG, PDMB200E6, PM100CBS060
Keywords - MP6752 transistor spec
MP6752 cross reference
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History: NXH80T120L2Q0 | MIXG180W1200TEH | MIXG240W1200TEH
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