PS21265-P Datasheet. Specs and Replacement

Type Designator: PS21265-P  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 51.2 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

Package: MODULE

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PS21265-P datasheet

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PS21265-P

MITSUBISHI SEMICONDUCTOR MITSUBISHI SEMICONDUCTOR PS21265-P/AP PS21265-P/AP TRANSFER-MOLD TYPE TRANSFER-MOLD TYPE INSULATED TYPE INSULATED TYPE PS21265 INTEGRATED POWER FUNCTIONS 600V/20A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRI... See More ⇒

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PS21265-P

PS21265-P PS21265-AP Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Intellimod Module www.pwrx.com Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts DETAIL A H "A" HEATSINK SIDE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 M P N B K W Q C 22 23 24 25 26 L J DETAIL "A" G G G F E R D DETAIL "B" DETAIL "C" DETAIL "D... See More ⇒

Specs: MUBW30-12A6, NXH80T120L2Q0, NXH80T120L2Q0PG, PDMB200E6, PM100CBS060, PM15CMA060, PM25CL1A120, PS21265-AP, CRG60T60AK3HD, PSTG25HDT12, PSTG25HTT12, PSTG50HST12, PSTG75HST12, GT15Q102, MSG50N350FH, NGD8201AN, FMG2G400US60

Keywords - PS21265-P transistor spec

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