All IGBT. IXBH15N160 Datasheet

 

IXBH15N160 Datasheet and Replacement


   Type Designator: IXBH15N160
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Package: TO247AD
 

 IXBH15N160 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXBH15N160 Datasheet (PDF)

 ..1. Size:68K  1
 ixbh15n140 ixbh15n160.pdf pdf_icon

IXBH15N160

High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140

 6.1. Size:155K  1
 ixbh15n170 ixbt15n170.pdf pdf_icon

IXBH15N160

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

 6.2. Size:64K  ixys
 ixbh15n140-160.pdf pdf_icon

IXBH15N160

High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 15N160 IC25 = 15 AMOS Transistor VCE(sat) = 5.8 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features15N140 15N160 International standard packageVCES TJ = 25C to 150C 140

 9.1. Size:157K  ixys
 ixbh10n300.pdf pdf_icon

IXBH15N160

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBH10N300BIMOSFETTM MonolithicIC110 = 10ABipolar MOS TransistorVCE(sat) 3.2VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30

SHOW MORE

Datasheet: GT15Q102 , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IKW50N60H3 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC .

History: IRG7PA19U

Keywords - IXBH15N160 transistor datasheet

 IXBH15N160 cross reference
 IXBH15N160 equivalent finder
 IXBH15N160 lookup
 IXBH15N160 substitution
 IXBH15N160 replacement

 

 
Back to Top

 


 
.