IXBH15N160 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBH15N160

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 1600

Collector-Emitter saturation Voltage |Vcesat|, V: 5.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 60

Maximum Collector Capacity (Cc), pF: 80

Package: TO247AD

IXBH15N160 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBH15N160 Datasheet (PDF)

6.1. ixbh15n170 ixbt15n170.pdf Size:155K _1

Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C25 A TO-24

6.2. ixbh15n140-160.pdf Size:64K _ixys

High Voltage BIMOSFETTM IXBH 15N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 15N160 IC25 = 15 A MOS Transistor VCE(sat) = 5.8 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 15N140 15N160 • International standard package VCES TJ = 25°C to 150°C 140

 9.1. ixbh10n170.pdf Size:486K _ixys

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C20 A TO-247 AD (IX

9.2. ixbh10n300hv.pdf Size:271K _ixys

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor  VCE(sat)   2.8V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V

 9.3. ixbh10n300.pdf Size:157K _ixys

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor  VCE(sat)   3.2V   TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V E VGES Continuous ± 20 V G = Gate C = Collector VGEM Transient ± 30

9.4. ixbh12n300.pdf Size:176K _ixys

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

 9.5. ixbh16n170.pdf Size:174K _ixys

High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G VGES Continuous ± 20 V C (TAB) C E VGEM Transient ± 30 V IC25 TC = 25°C 40 A TO-268 (IXBT

9.6. ixbh10n170 ixbt10n170.pdf Size:596K _ixys

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C20 A TO-247 AD (IX

9.7. ixbh16n170a ixbt16n170a.pdf Size:51K _ixys

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V G E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C1

9.8. ixbh16n170a.pdf Size:50K _ixys

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V G E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C1

9.9. ixbh14n300hv.pdf Size:247K _ixys

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA14N300HV BIMOSFETTM Monolithic IXBH14N300HV IC110 = 14A Bipolar MOS Transistor  VCE(sat)   2.7V   TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V TO-247HV (IXBH) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

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