MM25G3T120B Specs and Replacement
Type Designator: MM25G3T120B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 326 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: TO247
MM25G3T120B Substitution - IGBTⓘ Cross-Reference Search
MM25G3T120B datasheet
mm25g3t120b.pdf
MM25G3T120B 1200V 25A IGBT April 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical appli... See More ⇒
mm25g3u120bx.pdf
MM25G3U120BX 1200V 25A IGBT August 2018 Preliminary RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical ap... See More ⇒
mm25g120b.pdf
MM25G120B 1200V 25A IGBT October 2012 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo con... See More ⇒
Specs: MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, MM20G3R135B, MM20G3T135B, RJH60F5DPQ-A0, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN, MM50G3T120BM, MM50G3U120BMX
Keywords - MM25G3T120B transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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