IRG4RC10U
IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4RC10U
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 38
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 8.5
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.15
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 11
nS
Coesⓘ - Output Capacitance, typ: 21
pF
Qgⓘ -
Total Gate Charge, typ: 15
nC
Package:
D-PAK
IRG4RC10U
Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4RC10U
Datasheet (PDF)
..1. Size:136K international rectifier
irg4rc10u.pdf
PD - 91572AIRG4RC10UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighterVCE(on) typ. = 2.15VG parameter distribution and higher efficiency than previous
0.1. Size:194K international rectifier
irg4rc10ud.pdf
PD 91571AI UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution a
6.1. Size:724K international rectifier
irg4rc10s.pdf
PD- 91732BIRG4RC10Swww.irf.com 107/04/07IRG4RC10S1.82 www.irf.comIRG4RC10Swww.irf.com 3IRG4RC10S4 www.irf.comIRG4RC10Swww.irf.com 5IRG4RC10S6 www.irf.comIRG4RC10Swww.irf.com 7IRG4RC10SD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationNote: For the most current drawing please refer
6.2. Size:726K international rectifier
irg4rc10sd.pdf
PD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1V(typ) @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.10V KHz in brushless DC drives.G Tight parameter distribution IGBT
6.3. Size:193K international rectifier
irg4rc10kd.pdf
PD 91736AIRG4RC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.39V Generation 4 IGBT design provides tighterG parameter distributio
6.4. Size:138K international rectifier
irg4rc10k.pdf
PD 91735AIRG4RC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-252AA
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