2SH11 Datasheet and Replacement
Type Designator: 2SH11
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Package: TO220AB
- IGBT Cross-Reference
2SH11 Datasheet (PDF)
2sh11.pdf

ADE208274 (Z)2SH11Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO220ABHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate12. Collector233. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , CRG40T60AK3HD , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 .
History: 2MBI100UA-120 | SKM150GB12T4
Keywords - 2SH11 transistor datasheet
2SH11 cross reference
2SH11 equivalent finder
2SH11 lookup
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2SH11 replacement
History: 2MBI100UA-120 | SKM150GB12T4



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