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2SH11 Spec and Replacement


   Type Designator: 2SH11
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 75 nS
   Package: TO220AB

 2SH11 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2SH11 specs

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2SH11

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Specs: HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , IRG4PC50U , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 .

History: 2N6978 | 2PG401 | 2PG402 | 2PG352

Keywords - 2SH11 transistor spec

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