All IGBT. 2SH11 Datasheet

 

2SH11 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2SH11
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 75 nS
   Package: TO220AB

 2SH11 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2SH11 Datasheet (PDF)

 ..1. Size:44K  hitachi
 2sh11.pdf

2SH11 2SH11

ADE208274 (Z)2SH11Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO220ABHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate12. Collector233. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

Datasheet: HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , TGAN20N135FD , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 .

 

 
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