MMG150W060X6EN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG150W060X6EN
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 180 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 30 nS
Qgⓘ - Total Gate Charge, typ: 1600 nC
Package: MODULE
MMG150W060X6EN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG150W060X6EN Datasheet (PDF)
mmg150w060x6en.pdf
MMG150W060X6EN600V 150A Six-Pack ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Indus
mmg150w060xb6en.pdf
MMG150W060XB6EN600V 150A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop
mmg150w120x6tc.pdf
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mmg150wj120xb6tc.pdf
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mmg150wb170h6en.pdf
MMG150WB170H6EN1700V 150A Four-Pack ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switch
mmg150w120x6tn.pdf
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