MMG15CB120XB6TN Datasheet and Replacement
Type Designator: MMG15CB120XB6TN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
- IGBT Cross-Reference
MMG15CB120XB6TN Datasheet (PDF)
mmg15cb120xb6tn.pdf

MMG15CB120XB6TN1200V 15A PIM ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Substrate for Low Thermal Resistance Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to integrated Mounting clamps
mmg15cb120xb6tc.pdf

MMG15CB120XB6TC1200V 15A PIM ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged moun
mmg15cb120x6tc.pdf

MMG15CB120X6TC1200V 15A Six-Pack ModuleNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - MMG15CB120XB6TN transistor datasheet
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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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