MMG50H060XB6EN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG50H060XB6EN
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 190
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 60
Total Gate Charge (Qg), typ, nC: 500
Package: MODULE
MMG50H060XB6EN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG50H060XB6EN Datasheet (PDF)
mmg50h060xb6en.pdf
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mmg50hb120h6un.pdf
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mmg50h120x6hn.pdf
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mmg50h120h6hn.pdf
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mmg50hd120xb6t4n.pdf
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mmg50h120x6tc.pdf
MMG50H120X6TC1200V 50A Six-Pack ModuleMay 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg50hd120xb6tc.pdf
MMG50HD120XB6TC1200V 50A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
mmg50hb120h6hn.pdf
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