All IGBT. MMG50W120XB6TC Datasheet

 

MMG50W120XB6TC Datasheet and Replacement


   Type Designator: MMG50W120XB6TC
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 76 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Qg ⓘ - Total Gate Charge, typ: 270 nC
   Package: MODULE
 

 MMG50W120XB6TC substitution

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MMG50W120XB6TC Datasheet (PDF)

 ..1. Size:1433K  macmic
mmg50w120xb6tc.pdf pdf_icon

MMG50W120XB6TC

MMG50W120XB6TC1200V 50A PIM ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 1.1. Size:478K  macmic
mmg50w120xb6tn.pdf pdf_icon

MMG50W120XB6TC

MMG50W120XB6TN1200V 50A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 4.1. Size:1288K  macmic
mmg50w120xt6tc.pdf pdf_icon

MMG50W120XB6TC

MMG50W120XT6TC1200V 50A Rectifier+Inverter ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat

 8.1. Size:232K  macmic
mmg50w060xb6en.pdf pdf_icon

MMG50W120XB6TC

MMG50W060XB6EN600V 50A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SIGC04T60GSE | IXGP20N60B | MIXA50WB600TED | MIXD600PF650TSF | MG75Q1BS11 | FGA25N120ANTDTU | XD075H065CX1S3

Keywords - MMG50W120XB6TC transistor datasheet

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