All IGBT. MMG600WB065B6TC Datasheet

 

MMG600WB065B6TC Datasheet and Replacement


   Type Designator: MMG600WB065B6TC
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1760 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 690 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 130 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MMG600WB065B6TC Datasheet (PDF)

 0.1. Size:377K  macmic
mmg600wb065b6tc.pdf pdf_icon

MMG600WB065B6TC

MMG600WB065B6TC650V 600A IGBT ModuleDecember 2020 Preliminary RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATION

 1.1. Size:1323K  macmic
mmg600wb065b6en.pdf pdf_icon

MMG600WB065B6TC

MMG600WB065B6EN650V 600A IGBT ModuleMarch 2017 Preliminary RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl

 3.1. Size:1175K  macmic
mmg600wb065tlb6en.pdf pdf_icon

MMG600WB065B6TC

MMG600WB065TLB6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl

 3.2. Size:1174K  macmic
mmg600wb065tla6en.pdf pdf_icon

MMG600WB065B6TC

MMG600WB065TLA6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - MMG600WB065B6TC transistor datasheet

 MMG600WB065B6TC cross reference
 MMG600WB065B6TC equivalent finder
 MMG600WB065B6TC lookup
 MMG600WB065B6TC substitution
 MMG600WB065B6TC replacement

 

 
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