All IGBT. MMG600WE120B6E4N Datasheet

 

MMG600WE120B6E4N Datasheet and Replacement


   Type Designator: MMG600WE120B6E4N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 915 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MMG600WE120B6E4N Datasheet (PDF)

 0.1. Size:227K  macmic
mmg600we120b6e4n.pdf pdf_icon

MMG600WE120B6E4N

MMG600WE120B6E4N1200V 600A IGBT ModuleMay 2017 Version 01 RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo

 7.1. Size:1175K  macmic
mmg600wb065tlb6en.pdf pdf_icon

MMG600WE120B6E4N

MMG600WB065TLB6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl

 7.2. Size:1323K  macmic
mmg600wb065b6en.pdf pdf_icon

MMG600WE120B6E4N

MMG600WB065B6EN650V 600A IGBT ModuleMarch 2017 Preliminary RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl

 7.3. Size:1858K  macmic
mmg600wb170b.pdf pdf_icon

MMG600WE120B6E4N

MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - MMG600WE120B6E4N transistor datasheet

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