All IGBT. IXDH20N120D1 Datasheet

 

IXDH20N120D1 Datasheet and Replacement


   Type Designator: IXDH20N120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 75 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXDH20N120D1 Datasheet (PDF)

 ..1. Size:82K  ixys
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IXDH20N120D1

IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V

 4.1. Size:82K  ixys
 ixdh20n120.pdf pdf_icon

IXDH20N120D1

IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V

Datasheet: IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IHW40T60 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IXDH20N120D1 transistor datasheet

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