All IGBT. MMG75W060XB6EN Datasheet

 

MMG75W060XB6EN Datasheet and Replacement


   Type Designator: MMG75W060XB6EN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 95 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Qgⓘ - Total Gate Charge, typ: 800 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MMG75W060XB6EN Datasheet (PDF)

 ..1. Size:232K  macmic
mmg75w060xb6en.pdf pdf_icon

MMG75W060XB6EN

MMG75W060XB6EN600V 75A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe

 8.1. Size:286K  macmic
mmg75w120xb6tc.pdf pdf_icon

MMG75W060XB6EN

MMG75W120XB6TC1200V 75A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 8.2. Size:372K  macmic
mmg75w120x6tn.pdf pdf_icon

MMG75W060XB6EN

MMG75W120X6TN1200V 75A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free

 8.3. Size:291K  macmic
mmg75wd120xb6tc.pdf pdf_icon

MMG75W060XB6EN

MMG75WD120XB6TC1200V 75A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - MMG75W060XB6EN transistor datasheet

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