MMGT50W120XB6C Datasheet and Replacement
Type Designator: MMGT50W120XB6C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 340 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
- IGBT Cross-Reference
MMGT50W120XB6C Datasheet (PDF)
mmgt50w120xb6c.pdf

MMGT50W120XB6C1200V 50A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmgt50w120x6c.pdf

MMGT50W120X6C1200V 50A Six-Pack ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe
mmgt50h120x6c.pdf

MMGT50H120X6C1200V 50A Six-Pack ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe
Datasheet: MMGT10CB120XB6C , MMGT15CB120XB6C , MMGT15H120XB6C , MMGT200Q120B6C , MMGT25H120XB6C , MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , IKW50N60T , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A .
History: MMG300D120B6UC | AOTF5B65M2
Keywords - MMGT50W120XB6C transistor datasheet
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History: MMG300D120B6UC | AOTF5B65M2



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