MMGT75WD120XB6C Datasheet and Replacement
Type Designator: MMGT75WD120XB6C
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 440 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 115 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 75 nS
Package: MODULE
MMGT75WD120XB6C Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMGT75WD120XB6C Datasheet (PDF)
mmgt75wd120xb6c.pdf
MMGT75WD120XB6C 1200V 75A PIM Module August 2016 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
mmgt75w120xb6c.pdf
MMGT75W120XB6C 1200V 75A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
mmgt75w120x6c.pdf
MMGT75W120X6C 1200V 75A Six-Pack Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe... See More ⇒
Datasheet: MMGT25H120XB6C , MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , IKW30N60H3 , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 .
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