IXDN50N120AU1 Datasheet. Specs and Replacement

Type Designator: IXDN50N120AU1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 500 pF

Package: SOT227B

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IXDN50N120AU1 datasheet

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IXDN50N120AU1

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IXDN50N120AU1

IXDN 55N120 VCES = 1200 V High Voltage IGBT IXDN 55N120 D1 IC25 = 100 A with optional Diode VCE(sat) typ = 2.3 V Short Circuit SOA Capability Square RBSOA C C miniBLOC, SOT-227 B E153432 E G G G E E IXDN 55N120 IXDN 55N120 D1 E C E = Emitter , C = Collector Symbol Conditions Maximum Ratings G = Gate, E = Emitter VCES TJ = 25 C to 150 C 1200 V Either Emitter terminal ca... See More ⇒

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IXDN50N120AU1

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Specs: IRGS14B40L, IRGS14C40L, IXDA20N120AS, IXDH20N120, IXDH20N120D1, IXDH30N120, IXDH30N120AU1, IXDH30N120D1, MGD623S, IXDN55N120, IXDN55N120D1, IXDN75N120, IXDT30N120, IXDT30N120AU1, IXDT30N120D1, IXGA12N100, IXGA12N100A

Keywords - IXDN50N120AU1 transistor spec

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