All IGBT. IXDN50N120AU1 Datasheet

 

IXDN50N120AU1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXDN50N120AU1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Package: SOT227B

 IXDN50N120AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXDN50N120AU1 Datasheet (PDF)

 ..1. Size:137K  ixys
 ixdn50n120au1.pdf

IXDN50N120AU1 IXDN50N120AU1

 9.1. Size:72K  ixys
 ixdn55n120 ixdn55n120d1.pdf

IXDN50N120AU1 IXDN50N120AU1

IXDN 55N120 VCES = 1200 VHigh Voltage IGBTIXDN 55N120 D1 IC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOAC CminiBLOC, SOT-227 B E153432 EGG GE E IXDN 55N120 IXDN 55N120 D1ECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal ca

 9.2. Size:78K  ixys
 ixdn55n120d1.pdf

IXDN50N120AU1 IXDN50N120AU1

IXDN 55N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOACminiBLOC, SOT-227 B E153432 EGGEECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal can be used asVCGR TJ = 25C to 150

Datasheet: IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , STGB10NB37LZ , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A .

 

 
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