NCE15TD60B Spec and Replacement
Type Designator: NCE15TD60B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220
NCE15TD60B Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE15TD60B specs
nce15td60b.pdf
PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch... See More ⇒
nce15td60bt.pdf
Pb Free Product NCE15TD60BT 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
Specs: RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , FGL60N100BNTD , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 .
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