NCE80TD65BT
IGBT. Datasheet pdf. Equivalent
Type Designator: NCE80TD65BT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 390
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 160
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 17
nS
Coesⓘ - Output Capacitance, typ: 258
pF
Qgⓘ -
Total Gate Charge, typ: 331
nC
Package:
TO247
NCE80TD65BT
Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE80TD65BT
Datasheet (PDF)
..1. Size:661K 1
nce80td65bp nce80td65bt.pdf 
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
..2. Size:661K ncepower
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
..3. Size:1655K ncepower
nce80td65bt.pdf
Pb Free ProductNCE80TD65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
0.1. Size:1591K ncepower
nce80td65bt4.pdf
Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
4.1. Size:1542K ncepower
nce80td65bp.pdf
Pb Free ProductNCE80TD65BP650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
6.1. Size:1464K ncepower
nce80td60bt.pdf
Pb Free ProductNCE80TD60BT600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
6.2. Size:660K ncepower
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
6.3. Size:1423K ncepower
nce80td60bp.pdf
Pb Free ProductNCE80TD60BP600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
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