SGT60T65FD1P7 Datasheet and Replacement
Type Designator: SGT60T65FD1P7
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 190 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO247
- IGBT Cross-Reference
SGT60T65FD1P7 Datasheet (PDF)
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A
sgt60u65fd1pn sgt60u65fd1pt.pdf
SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf
SGT60U65FD1PN(PT)(P7) 60A650V C 2SGT60U65FD1PN(PT)(P7)1G 4 PlusField Stop IV+ UPSSMPS PFC 3 E 60A650VVCE(sat)( )=2.0V@IC=60A
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A600V C 2SGT60N60FD1PN/P7 Field Stop1G UPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IRGC16B60KB
Keywords - SGT60T65FD1P7 transistor datasheet
SGT60T65FD1P7 cross reference
SGT60T65FD1P7 equivalent finder
SGT60T65FD1P7 lookup
SGT60T65FD1P7 substitution
SGT60T65FD1P7 replacement
History: IRGC16B60KB
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