SGT60T65FD1P7 Datasheet, Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGT60T65FD1P7 Datasheet. Specs and Replacement

Type Designator: SGT60T65FD1P7 📄📄

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 450 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 190 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO247

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SGT60T65FD1P7 datasheet

..1. Size:558K 1
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SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A ... See More ⇒

9.1. Size:281K 1
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Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin... See More ⇒

9.2. Size:319K silan
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