SGT60T65FD1PT Spec and Replacement
Type Designator: SGT60T65FD1PT
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 190 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO3PN
SGT60T65FD1PT Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT60T65FD1PT specs
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A ... See More ⇒
sgt60u65fd1pn sgt60u65fd1pt.pdf
Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin... See More ⇒
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A ... See More ⇒
Specs: NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , BT60T60ANFK , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A .
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