2SH13 Datasheet and Replacement
Type Designator: 2SH13
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 130 nS
Package: TO220AB
2SH13 substitution
2SH13 Datasheet (PDF)
2sh13.pdf
ADE208286 (Z)2SH13Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO220ABHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate12. Collector233. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , 2SH11 , 2SH12 , GT30F125 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 .
History: NGTB40N60FLWG
Keywords - 2SH13 transistor datasheet
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History: NGTB40N60FLWG
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