All IGBT. SSG55N60N Datasheet

 

SSG55N60N IGBT. Datasheet pdf. Equivalent


   Type Designator: SSG55N60N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 195 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Qgⓘ - Total Gate Charge, typ: 180 nC
   Package: TO258

 SSG55N60N Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SSG55N60N Datasheet (PDF)

 6.1. Size:60K  1
 ssg55n60.pdf

SSG55N60N SSG55N60N

SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP /600 Volts TO-254 and TO-254Z 1.65 V saturation ultrafast IGBT TO-258 and TO-259 Features: Lowest ON-resistance in the industry Hermetically Sealed, Isolated Pa

 9.1. Size:1421K  secos
 ssg5509a.pdf

SSG55N60N SSG55N60N

SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 m Elektronische Bauelemente P-Ch: -4.8 A, -30 V, RDS(ON) 55 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8DESCRIPTION The SSG5509A uses advanced trench technology to Bprovide excellent on-resistance extremely efficient and

Datasheet: HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , BT40T60ANF , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 .

 

 
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